(Hong Kong)
Product Summary
The TC554001AF70L is a 4,194,304-bit static random access memory, which is organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS silicon gate process technology,this device operates from a single 5V±10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz and a minimum cycle time of 70 ns. The TC554001AF70L is automatically placed in low-power mode at 2 μA standby current when chip enable is asserted high or is asserted low.
Parametrics
TC554001AF70L absolute maximum ratings: (1)power supply voltage: -0.3 to 7.0 V; (2)input voltage: -0.3 to 7.0 V; (3)input and output voltage: -0.5 to Vdd+0.5 V; (4)power dissipation: 0.6 W; (5)soldering temperature(10 s): 260 ℃; (6)storage temperature: -55 to 150 ℃; (7)operating temperature:0 to 70 ℃.
Features
TC554001AF70L features: (1)low-power dissipation operating: 55 mW/MHz(typical); (2)single power supply voltage of 5V ± 10%; (3)power down features using CE1 and CE2;(4)data retention supply voltage of 2 to 5.5V; (5)direct TTL compatibility for all inputs and outputs.
Diagrams
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Cornell Dubilier |
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