(Hong Kong)
Product Summary
The FM25256G is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25256G provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. These capabilities make the FM25256G ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation.
Parametrics
FM25256G absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD Electrostatic Discharge Voltage: Human Body Model (JEDEC Std JESD22-A114-B): 4kV; Charged Device Model (JEDEC Std JESD22-C101-A): 1kV; Machine Model (JEDEC Std JESD22-A115-A): 200V; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25256G features: (1)256K bit Ferroelectric Nonvolatile RAM; (2)Very Fast Serial Peripheral Interface - SPI; (3)Write Protection Scheme: Hardware Protection; Software Protection; (4)Wide Operating Range: Wide Voltage Operation 4.0V-5.5V; (5)Industry Standard Configurations: Industrial Temperature -40℃ to +85℃; 8-pin Green/RoHS SOIC (-G).
Diagrams
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