(Hong Kong)
Product Summary
The AD645JN is a low noise, precision FET input op amp. It offers the pico amp level input currents of a FET input device coupled with offset drift and input voltage noise comparable to a high performance bipolar input amplifier. The AD645JN is widely used in Low Noise Photodiode Preamps, CT Scanners and Precision I-V Converters.
Parametrics
AD645JN absloute maximum ratings: (1)Supply Voltage: ±18 V; (2)Internal Power Dissipation: Plastic (N): 1.1 Watts; Small Outline (R): 0.9 Watts; Cerdip (Q): 1.1 Watts; LCC (E): 0.8 Watts; (3)Input Voltage : ±VS; (4)Differential Input Voltage: ±6 V; (5)Storage Temperature Range (Q): –65℃ to +150℃; (N, R): –65℃ to +125℃; (6)Junction Temperature: +175℃; (7)Lead Temperature Range (Soldering 60 sec): +300℃.
Features
AD645JN features: (1)Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp; (2)LOW NOISE: 2 μV p-p max, 0.1 Hz to 10 Hz; 10 nV√H￣z max at 10 kHz; 11 fA p-p Current Noise 0.1 Hz to 10 Hz; (3)HIGH DC ACCURACY: 250 μV max Offset Voltage; 1 μV/8C max Drift; 1.5 pA max Input Bias Current; 114 dB Open-Loop Gain; (4)Available in Plastic Mini-DIP, 8-Pin Header Packages, or Chip Form.
Diagrams
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AD640* |
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AD640BP |
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