AT28BV64B20SI

EEPROM, 28-lead SOIC, 2.7V to 3.6V, 20μA, 200 ns, AT28BV64B20SI

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.00~2.00

PartNumber:: AT28BV64B20SI

Brand:: ATMEL Corporation - ATMEL | Pack: DIP | D/C: 05+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Susan's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-05-10

From Other Seller

Part Number:AT28BV64B20SI
US $1.00 - 2.00
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
HEF4051BT

US $0.15 - 1.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The AT28BV64B20SI is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel advanced nonvolatile CMOS technology, the AT28BV64B20SI offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 μA. The AT28BV64B20SI is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously.

Parametrics

AT28BV64B20SI absolute maximum ratings: (1)Temperature Under Bias: -55°C to +125°C ; (2)Storage Temperature: -65°C to +150°C; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground: -0.6V to +13.5V.

Features

AT28BV64B20SI features: (1)Single 2.7V to 3.6V Supply; (2)Hardware and Software Data Protection; (3)Low Power Dissipation: 15 mA Active Current; 20μA CMOS Standby Current; (4)Fast Read Access Time - 200 ns; (5)Automatic Page Write Operation: Internal Address and Data Latches for 64 Bytes; Internal Control Timer; (6)Fast Write Cycle Times: Page Write Cycle Time: 10 ms Maximum: 1 to 64 Byte Page Write Operation; (7)DATA Polling for End of Write Detection; (8)High-reliability CMOS Technology: Endurance: 100,000 Cycles; Data Retention: 10 Years; (9)JEDEC Approved Byte-wide Pinout; (10)Commercial and Industrial Temperature Ranges.